*童FQA9N90C、9N90、MOS管、场效应管

Features
• 9A, 900V, RDS(on) = 1.4Ω @VGS = 10 V
• Low gate charge ( t*ical 45 nC)
• Low Crss ( t*ical 14pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide *ior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
*ology.

TO-*N