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FQP6N90C/FQPF6N90C
900V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide *ior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V
• Low gate charge ( t*ical 30 nC)
• Low Crss ( t*ical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FAIRCHILD/*童
FQP6N90C
*缘栅(MOSFET)
N沟道
增强型
SW-REG/开关电源
N-FET硅N沟道
10(V)
900(V)
11(pF)
2(dB)
6000(mA)
167(mW)