IGBT、40N60

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SGH40N60UF
Ultra-Fast IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 20A
• High input impedance
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Description SGH40N60UF Units
VC* Collector-Emitter Voltage 600 V
VG* Gate-Emitter Voltage &plu*n; 20 V
IC
Collector Current @ TC = 25°C 40 A
Collector Current @ TC = 100°C 20 A
ICM (1) Pulsed Collector Current 160 A
PD Maximum Power Dissipation @ TC = 25°C 160 W
Maximum Power Dissipation @ TC = 100°C 64 W
TJ Operating Junction Temperature -55 to 150 °C
Tstg Storage Temperature Range -55 to 150 °C
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds 300 °C

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品牌/商标

FAIRCHILD/*童

型号/规格

SGH40N60UFD

种类

*缘栅(MOSFET)

沟道类型

N沟道

导电方式

增强型

用途

SW-REG/开关电源

材料

N-FET硅N沟道

开启电压

10(V)

夹断电压

600(V)

*间电容

10(pF)

低频噪声系数

2(dB)

漏*电流

40000(mA)

耗散功率

1600000(mW)