供应8N60，FQP8N60C，8N60场效应管，8N60

FQP8N60C/FQPF8N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide *ior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge *ology.
Features
7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V
Low gate charge ( t*ical 28 nC)
Low Crss ( t*ical 12 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability