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SGH40N60UF
Ultra-Fast IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 20A
• High input impedance
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Description SGH40N60UF Units
VC* Collector-Emitter Voltage 600 V
VG* Gate-Emitter Voltage &plu*n; 20 V
IC
Collector Current @ TC = 25°C 40 A
Collector Current @ TC = 100°C 20 A
ICM (1) Pulsed Collector Current 160 A
PD Maximum Power Dissipation @ TC = 25°C 160 W
Maximum Power Dissipation @ TC = 100°C 64 W
TJ Operating Junction Temperature -55 to 150 °C
Tstg Storage Temperature Range -55 to 150 °C
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds 300 °C
FAIRCHILD/*童
SGH40N60UFD
*缘栅(MOSFET)
N沟道
增强型
SW-REG/开关电源
N-FET硅N沟道
10(V)
600(V)
10(pF)
2(dB)
40000(mA)
1600000(mW)