FQA38N30、38N30、MOS管、场效应管

FQA38N30
N-Channel MOSFET
300V, 38A, 0.085?
Features
•RDS(on) = 0.07? ( T*.) @ VGS = 10V, ID = 19A
•Low gate charge ( t*ical 60 nC)
•Low Crss ( t*ical 60 pF)
•Fast switching
•100% avalanche tested
•Improved dv/dt capability
•*D Improved capability

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide *ior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.