*童FQPF9N50C、9N50、MOS管、场效应管

FQPF9N50C
500V N-Channel MOSFET
Features
• 9A, 500V, RDS(on) = 0.8Ω @VGS = 10 V
• Low gate charge (t*ical 28 nC)
• Low Crss (t*ical 24pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode (t*ical 100ns)
Description
These N-Channel enhancement mode power field effect transistors
are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize
on-state resistance, provide *ior switching performance,
and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency
switched mode power supplies, active power factor correction,
electronic lamp ballasts based on half bridge *ology.