FQA11N90C、11N90

FQA11N90C_F109
900V N-Channel MOSFET
Features
• 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V
• Low gate charge ( t*ical 60 nC)
• Low Crss ( t*ical 23pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide *ior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
*ology.