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*,长期大量供应三*管BU102,TO-92,欢迎来电咨询。
ELE*RICAL CHARA*ERISTICS (Tamb=25℃unless otherwise specified)
Parameter | Symbol | Test conditions | MIN | TYP | MAX | UNIT |
Collector-base breakdown voltage | V(BR)CBO | Ic=100μA,IE=0 | 600 |
|
| V |
Collector-emitter breakdown voltage | V(BR)CEO | Ic=1mA, IB=0 | 400 |
|
| V |
Emitter-base breakdown voltage | V(BR)EBO | IE=100μA, Ic=0 | 9 |
|
| V |
Collector cut-off current | ICBO | VCB=600V, lE=0 |
|
| 1 | mA |
Collector cut-off current | ICEO | VCB=400V, IB=0 |
|
| 0.5 | mA |
Emitter cut-off current | IEBO | VEB=6V, Ic=0 |
|
| 1 | mA |
DC current gain | hFE(1) | VCE=5V, lc=200mA | 15 |
| 35 |
|
Collector-emitter saturation voltage | VCE(sat) | Ic=200mA,lB=40mA |
|
| 0.5 | V |
Base-emitter daturation voltage | VBE(sat) | Ic=200mA,lB=40mA |
|
| 1.2 | V |
Storage time | tS | Ic=0.1A, (UI9600) | 2.0 |
| 6.0 | μS |
Transition frequency | fT | VCE=10V,lc=100mA,f=1MHZ | 5 |
|
| MHZ |
CLASSIFICATION OFhFE(1)
Range | 15-20 | 20-25 | 25-30 |
国产
BU102
放大
小功率
中频
NPN型
点接触型
硅(Si)
直插型
塑料封装
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