三*管S8050，EBC，TO-92

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

lc=100μA, lE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

lc=0.1mA, lB=0

25

V

Emitter-base breakdown voltage

V(BR)EBO

lE=100μA,lc=0

5

V

Collector cut-off current

lCBO

VCB=40V, lB=0

0.1

μA

Collector cut-off current

lCEO

VCE=20V, lB=0

1

μA

Emitter cut-off current

lEBO

VEB=5V,  lc=0

0.1

μA

DC current gain

hFE

VCE=1V,lc=50mA

85

400

Collector-emitter saturation voltage

VCE(sat)

lc=-500mA,lB=50mA

0. 6

V

Base-emitter saturation voltage

VBE(sat)

lc=-500mA,lB=50mA

1.2

V

Transition frequency

fT

VCE=6V,lc=20mA

f=30MHZ

150

180

MHZ

Rank

B

C

D

D3

Range

85-160

120-200

160-300

300-400