场效应管 BSC047N08NS3G,047N08NS,BSC047N08

BSC047N08NS3G,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,80V,100A,0.0047Ω

Parameter	Symbol	Conditions	Value	Unit
Drain-source breakdown voltage	V(BR)DSS	VGS=0V,ID=1mA	80	V
Continuous drain current	ID	VGS=10V,TC=25℃	100	A
Pulsed drain current	IDM	TC=25℃	400	A
Avalanche energy, single pulse	EAS	ID=50A, RGS=25Ω	310	mJ
Power dissipation	Ptot	TC=25℃	125	W
Gate source voltage	VGS		±20	V
Gate threshold voltage	VGS(th)	VDS=VGS,ID=90µA	3.5	V
Drain-source on-state resistance	RDS(on)	VGS=10V, ID=50A	4.7	mΩ
Input capacitance	Ciss	VGS=0V,VDS=40V, f=1MHz	3600	PF
Transconductance	gfs	\|VDS\|>2\|ID\|RDS(on)max,ID=100A	120	S

型号/规格

BSC047N08NS3G,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,80V,100A,0.0047Ω

品牌/商标

INFINEON（英飞凌）

封装形式

QFN-8 5*6/PG-TDSON-8

环保类别

无铅环保型

安装方式

贴片式

包装方式

5000/盘

供应 场效应管 BSC047N08NS3G,047N08NS,BSC047N08