供应 场效应管 BSC080N03LSG,080N03LS,BSC080N03
地区:广东 深圳
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型 号:BSC080N03LSG | ||||
标 记: 080N03LS | ||||
类 型:场效应管 | ||||
通道极性: N通道 | ||||
封 装:QFN-8 5*6/PG-TDSON-8 | ||||
备 注:正品 | ||||
Parameter | Symbol | Conditions | Value | Unit |
Drain-source breakdown voltage | V(BR)DSS | VGS=0V,ID=1mA | 30 | V |
Continuous drain current | ID | VGS=10V,TC=25℃ | 53 | A |
Pulsed drain current | IDM | TC=25℃ | 212 | A |
Avalanche energy, single pulse | EAS | ID=35A, RGS=25? | 15 | mJ |
Gate source voltage | VGS | ±20 | V | |
Power dissipation | Ptot | TC=25℃ | 35 | W |
Gate threshold voltage | VGS(th) | VDS=VGS,ID=250µA | 2.2 | V |
Drain-source on-state resistance | RDS(on) | VGS=10V, ID=30A | 8 | MΩ |
Input capacitance | Ciss | VGS=0V,VDS=15V, f=1MHz | 1300 | PF |
Transconductance | gfs | |VDS|>2|ID|RDS(on)max,ID=30A | 59 | S |
BSC080N03LSG,N,,PG-TSDSON-8,30V,53A,8mΩ.
INFINEON(英飞凌)
QFN-8 5*6/PG-TDSON-8
无铅环保型
贴片式
5000/盘
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