场效应管 BSZ088N03,088N03M,BSZ088N03MSG

BSZ088N03MSG,QFN-8 3.3*3.3/PG-TSDSON-8,SMD/MOS,N场,30V,40A,0.008Ω

Parameter	Symbol	Conditions	Value	Unit
Drain-source breakdown voltage	V(BR)DSS	VGS=0V,ID=1mA	30	V
Continuous drain current	ID	VGS=10V,TC=25℃	40	A
Power dissipation	Ptot	TC=25℃	35	W
Gate source voltage	VGS		±20	V
Gate threshold voltage	VGS(th)	VDS=VGS,ID=250µA	2	V
Avalanche energy, single pulse	EAS	ID=20 A, RGS=25Ω	25	mJ
Drain-source on-state resistance	RDS(on)	VGS=10V, ID=20A	8	mΩ
Input capacitance	Ciss	VGS=0V,VDS=15V, f=1MHz	2100	PF
Transconductance	gfs	\|VDS\|>2\|ID\|RDS(on)max,ID=30A	57	S

型号/规格

BSZ088N03MSG,QFN-8 3.3*3.3/PG-TSDSON-8,SMD/MOS,N场,30V,40A,0.008Ω

品牌/商标

INFINEON（英飞凌）

封装形式

QFN-8 3.3*3.3/PG-TSDSON-8

环保类别

无铅环保型

安装方式

贴片式

包装方式

5000/盘

功率特征

供应 场效应管 BSZ088N03,088N03M,BSZ088N03MSG