场效应管 CEF04N6 DFF4N60 4N60

CEF04N6,MOS,600V,2.5A,2.5Ω,220F DFF4N60,MOS,600V,4.

FEATUR*
600V , 2.5A , R DS(ON)=2.5? @VGS=10V.
Super high dense cell design for extremely low R DS(ON).
High power and current handling capability.
TO-220F full-pak for through hole

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