场效应管 FDPF5N50NZU,FDPF5N50

FDPF5N50NZU,TO-220F,DIP/MOS,N场,500V,3.9A,2Ω

FDPF13N50NZ,TO-220F,DIP/MOS,N场,500V,13A,0.52Ω
AOTF8N50,TO-220F,DIP/MOS,N场,500V,8A,0.85Ω
FDPF7N50U,TO-220F,DIP/MOS,N场,500V,5A,1.5Ω
AOTF13N50,TO-220F,DIP/MOS,N场,500V,13A,0.51Ω
AOTF16N50,TO-220F,DIP/MOS,N场,500V,16A,0.37Ω
2SK3561,TO-220F,DIP/MOS,N场,500V,8A,0.85Ω
2SK3568,TO-220F,DIP/MOS,N场,500V,12A,0.52Ω
TK8A50D,TO-220F,DIP/MOS,N场,500V,8A,0.85Ω
2SK3568,TO-220F,DIP/MOS,N场,500V,12A,0.52Ω
2SK3561,TO-220F,DIP/MOS,N场,500V,8A,0.85Ω

产品型号:FDPF5N50NZU

特点:
 * RDS(on) = 1.7Ω ( Typ.)@ VGS = 10V, ID = 1.95A
 * Low Gate Charge ( Typ. 9nC)
 * Low Crss ( Typ. 4pF)
 * Fast Switching
 * 100% Avalanche Tested
 * Improved dv/dt Capability
 * ESD Imoroved Capability
 * RoHS Compliant

封装:TO-220F

品牌：FAIRCHILD/仙童

源漏极间雪崩电压V(br)dss(V):500

夹断电压VGS(V):±25

最大漏极电流Id(A):3.9

源漏极最大导通电阻rDS(on)(Ω):2 @VGS = 10 V

开启电压VGS(TH)(V):5

功率PD(W):30

输入电容Ciss(PF):365 typ.

通道极性:N沟道

低频跨导gFS(s)：4.2

单脉冲雪崩能量EAS(mJ):135

导通延迟时间Td(on)(ns):12 typ.

上升时间Tr(ns):19 typ.

关断延迟时间Td(off)(ns):31 typ.

下降时间Tf(ns):22 typ.

温度(℃): -55 ~150

描述:500V,3.9A N-沟道增强型场效应晶体管

登陆我站:https://www.chinajincheng.com
(产品图片,产品参数,产品PDF,产品Datasheet等产品相关信息在线了解\查询\下载.)