场效应管IRLML6402 SOT-23

☆★ Ultra Low On-Resistance
☆★P-Channel MOSFET
☆★ SOT-23 Footprint
☆★Low Profile (<1.1mm)
☆★Available in Tape and Reel
☆★Fast Switching

These P-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low onresistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFETÒ
power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in battery and
load management.
A thermally enhanced large pad leadframe has been incorporated
into the standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This package,
dubbed the Micro3ä, is ideal for applications where printed
circuit board space is at a premium. The low profile (<1.1mm)
of the Micro3 allows it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
The thermal resistance and power dissipation are the *
available.