供应优质场效应管FDC6420C SOT-163

FDC6420C
20V N & P-Channel PowerTrenchÒ Ò MOSFETs
General Description
These N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced  PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain *ior
switching performance.
These devices have been designed to offer
exceptional power dissipation in a very *all footprint
for applications where the bigger more expensive
SO-8 and TSSOP-8 packages are impractical.
Applications
·  DC/DC converter
·  Load switch
·  LCD display inverter
Features
·  Q1  3.0 A, 20V. RDS(ON) = 70 mW @ VGS = 4.5 V
RDS(ON) = 95 mW @ VGS = 2.5 V
·  Q2  –2.2 A, 20V. RDS(ON) = 125 mW @ VGS = –4.5 V
RDS(ON) = 190 mW @ VGS = –2.5 V
·  Low gate charge
·  High performance trench technology for extremely
low RDS(ON).
·  SuperSOT –6 package: *all footprint (72% *aller than
SO-8); low profile (1mm thick).