供应场效应管MOSFET FQU2N60

FQD2N60 / FQU2N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide *ior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Features
• 2.0A, 600V, RDS(on) = 4.7Ω @VGS = 10 V
• Low gate charge ( t*ical 9.0 nC)
• Low Crss ( t*ical 5.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability