供应RAMTRON铁电存储器 *5C160B-GTR
地区：广东 深圳
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*原厂原装无铅现货，11+，2500/盘
The *5C160B-GTR is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. The *5C160B-GTR provides reliable data retention for years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. Unlike serial EEPROMs, the *5C160B-GTR performs write operations at bus speed. No write delays are incurred.
*5C160B-GTR absolute maximum ratings: (1)Power Supply Voltage with respect to VSS:-1.0V to +7.0V ; (2)Voltage on any pin with respect to VSS:-1.0V to +7.0V and VIN < VDD+1.0V ; (3)Storage Temperature:-55℃ to + 125℃ ; (4)Lead Temperature (Soldering, 10 seconds):300℃; (5)Electrostatic Discharge Voltage: Human Body Model (JEDEC Std J*D22-A114-B):4kV, Charged Device Model (JEDEC Std J*D22-C101-A):1kV, Machine Model (JEDEC Std J*D22-A115-A):400V ; (6)Package Moisture Sensitivity Level:MSL-1.
*5C160B-GTR features: (1)Organized as 2,048 x 8 bits ; (2)High Endurance 1 Trillion (1012) Read/Writes ; (3)NoDelay Writes ; (4)Advanced High-Reliability Ferroelectric Process ; (5)Up to 15 MHz maximum Bus Frequency ; (6)Direct hardware replacement for EEPROM ; (7)SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) ; (8)Hardware Protection ; (9)Software Protection ; (10)Low Power Consumption ; (11)10 μA Standby Current ; (12)Automotive Temperature -40℃ to +125℃; (13)Qualified to AEC Q100 Specification ; (14)“Green”/RoHS 8-pin SOIC.
*5C160B-GTR
RAMTRON
