供应RAMTRON铁电存储器 *5CL6*-GTR
地区：广东 深圳
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*原厂原装无铅现货，11+，2500/盘
The *5CL6*-GTR. is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. The *5CL6*-GTR. provides reliable data retention for years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. Unlike serial EEPROMs, the *5CL6*-GTR. performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling.
*5CL6*-GTR. absolute maximum ratings: (1)Power Supply Voltage with respect to VSS:-1.0V to +5.0V ; (2)Voltage on any pin with respect to VSS -1.0V to +5.0V and VIN < VDD+1.0V ; (3)Storage Temperature:-55℃ to + 125℃; (4)Lead Temperature (Soldering, 10 seconds):300℃; (5)Electrostatic Discharge Voltage: Human Body Model(JEDEC Std J*D22-A114-B):4kV, Machine Model(JEDEC Std J*D22-A115-A):300V ; (6)Package Moisture Sensitivity Level:MSL-1.
*5CL6*-GTR. features: (1)Organized as 8,192 x 8 bits ; (2)Unlimited Read/Write Cycles ; (3)NoDelay Writes ; (4)Advanced High-Reliability Ferroelectric Process ; (5)Up to 16 MHz Frequency ; (6)Direct Hardware Replacement for EEPROM ; (7)SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) ; (8)Hardware Protection ; (9)Software Protection ; (10)Low Power Consumption ; (11)Low Voltage Operation 3.0V to 3.6V ; (12)15 μA Standby Current ; (13)Automotive Temperature -40℃ to +125℃; (14)“Green”/RoHS 8-pin SOIC .
*5CL6*-GTR
RAMTRON
