供应富士通铁电存储器 *85RC64PNF-G-JNERE1
地区：广东 深圳
认证：
无
图文详情
产品属性
相关推荐
原装现货，11+，1500/盘，可替代*4CL64-GTR，*4CL6*-GTR
The *85RC64PNF-G-JNERE1 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The *85RC64PNF-G-JNERE1 adopts the two-wire serial interface. Unlike SRAM, the *85RC64PNF-G-JNERE1 is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the device has improved to be at least 1010 cycles, significantly out performing Flash memory and E2PROM in the number. The *85RC64PNF-G-JNERE1 does not need a polling sequence after writing to the memory such as the case of Flash memory nor E2PROM.
*85RC64PNF-G-JNERE1 absolute maximum ratings: (1)Power supply voltage, VCC: -0.5 to +4.0 V; (2)Input pin voltage, VIN: -0.5 to VCC + 0.5 ( ≤ 4.0) V; (3)Output pin voltage, VOUT: -0.5 to VCC + 0.5 ( ≤ 4.0) V; (4)Ambient temperature, TA: -40 to +85℃; (5)Storage temperature, Tstg: -40 to +125℃.
*85RC64PNF-G-JNERE1 features: (1)Bit configuration: 8,192 words × 8 bits; (2)Operating power supply voltage: 2.7 V to 3.6 V; (3)Operating frequency: 400 kHz (Max); (4)Two-wire serial interface: I2C-bus specification ver. 2.1 compliant, supports Standard-mode/Fast-mode. Fully controllable by two ports: serial clock (SCL) and serial data (SDA); (5)Operating temperature range: -40 to +85℃; (6)Data retention: 10 years ( + 55 ℃); (7)Read/write endurance : 1010 times; (8)Package: Plastic / SOP, 8-pin (FPT-8P-M02); (9)Low power consumption: Operating current 0.15 mA (Max: @400 kHz), Standby current 5 μA (T*).
*85RC64PNF-G-JNERE1
FUJITSU
