供应富士通铁电存储器 *85R256HPF-G-BND-ERAE1

*原厂原装无铅现货，11+，1000/盘，可替代FM18L08-70-SGTR或*8V020-SGTR

The *85R256HPF-G-BND-ERAE1 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words * 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the *85R256HPF-G-BND-ERAE1 is able to retain data without back-up battery. The memory cells used for the device has improved at least 1010 times of read/write access per bit, significantly outperforming FLASH memory and E2PROM in durability. The *85R256HPF-G-BND-ERAE1 uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.