供应RAMTRON铁电存储器 *4V10-G
地区：广东 深圳
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The *4V10-G is a 1-megabit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. The *4V10-G provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The *4V10-G performs write operations at bus speed. No write delays are incurred.
*4V10-G absolute maximum ratings: (1)Power Supply Voltage with respect to VSS:-1.0V to +4.5V ; (2)Voltage on any pin with respect to VSS:-1.0V to +4.5V and VIN < VDD+1.0V; (3)Storage Temperature:-55℃ to +125℃; (4)Lead Temperature (Soldering, 10 seconds):300℃; (5)Package Moisture Sensitivity Level:MSL-1.
*4V10-G features: (1)Organized as 131,072 x 8 bits ; (2)High Endurance 100 Trillion (1014) Read/Writes ; (3)10 year Data Retention ; (4)NoDelay Writes ; (5)Advanced High-Reliability Ferroelectric Process ; (6)Up to 3.4 MHz maximum bus frequency ; (7)Supports legacy timing for 100 kHz & 400 kHz ; (8)Device ID reads out Manufacturer ID & Part ID ; (9)Unique Serial Number (*4VN10) ; (10)Low Voltage Operation 2.0V to 3.6V ; (11)Active Current < 150 μA (t*. @ 100KHz) ; (12)90 μA Standby Current (t*.) ; (13)5 μA Sleep Mode Current (t*.) ; (14)Industrial Temperature -40℃ to +85℃; (15)8-pin Green/RoHS SOIC Package.
*4V10-G
RAMTRON
