无锡固电ISC供应2SD2012晶体管,三极管,功率管
地区：江苏 无锡
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产品属性
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·High DC Current Gain-
: hFE= 100 (Min)@ IC= 0.5A
·Low Saturation Voltage-
: VCE(sat)= 1.0V (Max)
·High Power Dissipation
: PC= 25 W(Max)@ TC= 25℃
APPLICATIONS
·Designed for audio frequency power amplifier
applications
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 60 | V |
VCEO | Collector-Emitter Voltage | 60 | V |
VEBO | Emitter-Base Voltage | 7 | V |
IC | Collector Current-Continuous | 3 | A |
IB | Base Current-Continuous | 0.5 | A |
PC | Collector Power Dissipation @ Ta=25℃ | 2.0 | W |
Collector Power Dissipation @ TC=25℃ | 25 | ||
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 50mA ; IB= 0 | 60 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 2A; IB= 0.2A |
|
| 1.0 | V |
VBE(on) | Base-Emitter On Voltage | IC= 0.5A ; VCE= 5V |
|
| 1.0 | V |
ICBO | Collector Cutoff Current | VCB= 60V ; IE=0 |
|
| 0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= 7V ; IC=0 |
|
| 0.1 | mA |
hFE-1 | DC Current Gain | IC= 0.5A ; VCE= 5V | 100 |
| 320 |
|
hFE-2 | DC Current Gain | IC= 2A ; VCE= 5V | 20 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= 0.5A ; VCE= 5V |
| 3 |
| MHz |
COB | Output Capacitance | IE= 0 ; VCB= 10V; ftest= 1.0MHz |
| 35 |
| pF |
是
ISC
2SD2012
功率
硅(Si)
NPN型
平面型
直插型
塑料封装
