SDRAM存储器MT41K256M8DA-125:K

MT41K256M8DA-125:K  MT41K256M8DA-125:K   MT41K256M8DA-125:K   MT41K256M8DA-125:K

存储器类型 易失

存储器格式 DRAM

技术 SDRAM - DDR3L

存储容量 2Gb （256M x 8）

存储器接口 并联

时钟频率 800MHz

写周期时间 - 字，页 -

访问时间 13.75ns

电压 - 电源 1.283V ~ 1.45V

工作温度 0°C ~ 95°C（TC）

安装类型 表面贴装型

封装/外壳 78-TFBGA

Description

The 1.35V DDR3L SDRAM device is a low-voltage ver-

sion of the 1.5V DDR3 SDRAM device. Refer to the

DDR3 (1.5V) SDRAM data sheet specifications when

running in 1.5V compatible mode.

Features

• V DD = V DDQ = 1.35V (1.283–1.45V)

• Backward-compatible to V DD = V DDQ = 1.5V ±0.075V

• Differential bidirectional data strobe

• 8n-bit prefetch architecture

• Differential clock inputs (CK, CK#)

• 8 internal banks

• Nominal and dynamic on-die termination (ODT)

for data, strobe, and mask signals

• Programmable CAS (READ) latency (CL)

• Programmable posted CAS additive latency (AL)

• Programmable CAS (WRITE) latency (CWL)

• Fixed burst length (BL) of 8 and burst chop (BC) of 4

(via the mode register set [MRS])

• Selectable BC4 or BL8 on-the-fly (OTF)

• Self refresh mode

• T C  of 95°C