现货供应 SUD50N024-06P 威世 场效应管 MOS管
地区：广东 深圳
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公司经营世界各*电子元器件,优势厂家: ON INFINEON FAIRCHILD ST NS NXP VISHAY IR IXYS MICREL MICROCHIP SAMSUNG AD BB XILINX ALTERA
优势供应各*厂家 集成电路,IC,通信IC,二*管,LED,三*管,场效应管,高频管,稳压管(器),三端稳压,可控硅,发光二*管,电压IC:LDO低压差稳压器,低电压检测复位IC,升压DC/DC转换器,降压DC/DC转换器,LED驱动器,电压检测器,稳压器,基准电压.
本公司*代理销售各*,国产品牌809/810/811/812全系列产品,STM09/STM810/STM811/STM812,MAX809/MAX810/MAX811/MAX812,MIC809/MIC810/MIC811/MIC812,LM809/LM810/LM811/LM812,
MCP809/MCP810/MCP811/MCP812等大量现货库存
本公司代理销售ON/安森美,Infineon/英飞凌,FAIRCHIL/*童,VISHAY/威世,NS/国半,ST/意法,IR等*厂家全系场效应管,MOS管,大中小功率管,稳压管,高频管,电原管理IC,复位检测IC,电源保护IC
ON/安森美:NCP NCV NTB NTD NGB NGD NTF MJD MC开头产品优势供应
NCP1117,NCP500,NCP511,NCP584,NCP585,NCP603,NCP699,NCP803,NCP1400,NCP1402,NCV1117,NCV4264,NCV4274,NCV4275,NCV4276,NTD12N10,NTD2955,NTD3055,MC33375,MC7805,MC7812,MC7815全系列产品现货供应
Infineon/英飞凌:BSC TLE BTS BSP IPB IPD SPB SPD开头产品优势供应
BSC059N03SG,BSC020N025SG,BSC022N03SG,BSC032N03SG,BSC072N03LDG,BSC027N04LSG,BSC020N03LSG,BSC059N04LSG,BSC120N03MSG
TLE4264,TLE4266,TLE4274,TLE4275,TLE4276,TLE4267,TLE4268,TLE4284,TLE4295,TLE4296,TLE5206,TLE4284
BTS100,BTS117,BTS410,BTS4140,BTS4141,BTS432,BTS441,BTE442,BTS452,BTS6163,BTS6133,
IPD20N03L,IPD05N03LAG,IPD04N03LAG,IPD06N03LAG,IPD090N03LG,IPD105N04LG,IPD060N03LG,IPD135N03LG,
SPD30N06S2L-23,SPD30N06S2-15,SPD03N60S5
本公司代理销售KINGBRIG.OSRA/欧司朗.Avago.LITEON/光宝.EVERLIGHT/亿光 全系列发光二*管(LED)。LTST-S326XKT,LTST-S326KGJ,LTST-C191TBKT,LTST-C230KGKT,LTST-C930KRKT,LTST-S110KSKT,LTST-C170GKT,
LTST-S110KFKT,L-1503CB,L-34F3C,KP-23*GC,KPC-3216SURC,KP-3216,LTW-670DS,
LWT6SG,LSM67K,LBT676,LUS250-DO,LWT673-R1-7K7L,L-C191KR*,LBL29G-P2R1-35
现货供应 TOREX/特瑞仕,RICHTEK/立锜,Ricoh/理光等*,国产品牌电源管理IC,DC-DC,LDO,升压/降压IC,驱动IC,充电IC,检测IC
RT9193-18/RT9193-25/RT9193-28/RT9193-30/RT9193-33GB,RT8058GQE、RT9278GQV、RT8008GB、RT8024GB,RT9711A/B/CGB,RT9505GQW,RT9818C-27GV,RT8010GQW,RT9199GSP,RT8259GJ6,RT9284A/B-15/20GJ6E,RT8267GS,
RT8269GSP,RT8272GSP,RT9183HGS,XC6206全系列,XC6214全系列,XC61FC全系列,XC62FP全系列,XC6372全系列
网上报价只做参考,报价以当天为准,有实单请报接受价,尽量做到*优势的价格让贵司接单
Vishay/威世通
SUD50N024-06P
*缘栅(MOSFET)
N沟道
耗尽型
L/功率放大
SMD(SO)/表面封装
N-FET硅N沟道
1（V）
1（V）
1（μS）
1（pF）
1（dB）
1（mA）
1（mW）
