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FGA15N120ANTD / FGA15N120ANTD_F109
1200V NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient
• Low saturation voltage: VCE(sat), t* = 1.9V
@ IC = 15A and TC = 25°C
• Low switching loss: Eoff, t* = 0.6mJ
@ IC = 15A and TC = 25°C
• Extremely enhanced avalanche capability
Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation.
This device is well suited for the resonant or soft switching application
such as induction heating, microwave oven, etc.
否
FAIRCHILD/*童
FGA15N120ANTD
放大
硅(Si)
NPN型
1200(V)
30(A)
186(W)
面接触型
直插型
金属封装