*童FQP5N60C、*童5N60、场效应管

FQP5N60C/FQPF5N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide *ior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge *ology.
Features
• 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V
• Low gate charge ( t*ical 15 nC)
• Low Crss ( t*ical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability