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MOSFET, 100V, 33A, 44 mOhm, 47.3 nC Qg, D2-Pak
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 33
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 23 A
IDM Pulsed Drain Current 110
PD @TC = 25°C Power Dissipation 130 W
Linear Derating Factor 0.87 W/°C
VGS Gate-to-Source Voltage &plu*n; 20 V
IAR Avalanche Current 16 A
EAR Repetitive Avalanche Energy 13 mJ
dv/dt Peak Diode Recovery dv/dt 7.0 V/ns
TJ Operating Junction and -55 to 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf in (1.1N m)
IR/国际整流器
IRF540NS
*缘栅(MOSFET)
N沟道
耗尽型
SMD(SO)/表面封装
N-FET硅N沟道
100(V)
20(V)
5(μS)
47.3(pF)
6(dB)
1(mA)
1(mW)