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深圳香港真实库存现货,*对原装。
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SY*OL LIMIT UNIT
Drain-Source Voltage VDS 400
V
Gate-Source Voltage VGS &plu*n; 20
Continuous Drain Current VGS at 10 V
TC = 25 °C
ID
10
TC = 100 °C 6.3 A
Pulsed Drain Currenta IDM 40
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energyb EAS 520 mJ
Repetitive Avalanche Currenta IAR 10 A
Repetitive Avalanche Energya EAR 13 mJ
Maximum Power Dissipation TC = 25 °C PD 125 W
Peak Diode Recovery dV/dtc dV/dt 4.0 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300d
Mounting Torque 6-32 or M3 screw
IR/VISHAY
IRF730PBF
*缘栅(MOSFET)
N沟道
增强型
L/功率放大
CER-DIP/陶瓷直插
N-FET硅N沟道
20(V)
20(V)
5(μS)
20(pF)
1(dB)
30(mA)
50(mW)