IRF2805PBF MOSFET ▊进口原装现货▊

Parameter

Max.

Units

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V (Silicon limited)

175

A

I_D @ T_C = 100°C

Continuous Drain Current, V_GS @ 10V (See Fig.9)

120

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V (Package limited)

75

IDM

Pulsed Drain Current CD

700

P_D @T_C = 25°C

Power Dissipation

330

W

Linear Derating Factor

2.2

W/°C

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulse Avalanche Energy0

450

mJ

E_AS (6 sigma)

Single Pulse Avalanche Energy Tested Value<v

1220

IAR

Avalanche CurrentCD

See Fig.12a, 12b, 15, 16

A

EAR

Repetitive Avalanche Energy®

mJ

T_J

TSTG

Operating Junction and

Storage Temperature Range

-55 to + 175

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Mounting Torque, 6-32 or M3 screw

1.1 (10)

N•m (lbf•in)