IRLR3636TRPBF MOSFET ▊进口原装现货▊

Symbol

Parameter

Max.

Units

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V (Silicon Limited)

99 G)

A

I_D @ T_C = 100°C

Continuous Drain Current, V_GS @ 10V (Silicon Limited)

70 G)

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V (Package Limited)

50

IDM

Pulsed Drain Current <I)  

396

P_D @T_C = 25°C

Maximum Power Dissipation

143

W

Linear Derating Factor

0.95

W/°C

VGS

Gate-to-Source Voltage

±16

V

dv/dt

Peak Diode Recovery @

22

V/ns

T_J

TSTG

Operating Junction and

Storage Temperature Range

-55  to + 175

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case)