IRFP4468PBF MOSFET ▊进口原装现货▊

Symbol

Parameter

Max.

Units

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V (Silicon Limited)

290CD

A

I_D @ T_C = 100°C

Continuous Drain Current, V_GS @ 10V (Silicon Limited)

200

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)

195

IDM

Pulsed Drain Current al

1120

P_D @T_C = 25°C

Maximum Power Dissipation

520

W

Linear Derating Factor

3.4

W/°C

VGS

Gate-to-Source Voltage

± 20

V

dv/dt

Peak Diode Recovery ©

10

V/ns

T_J

TSTG

Operating Junction and

Storage Temperature Range

-55  to + 175

°C

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

Mounting torque, 6-32 or M3 screw

10lb·in (1.1N·m)

Symbol

Parameter

Typ.

Max.

Units

RqJC

Junction-to-Case ®

–––

0.29

°C/W

RqCS

Case-to-Sink, Flat Greased Surface

0.24

–––

RqJA

Junction-to-Ambient ®®

–––

40

EAS (Thermally limited)

Single Pulse Avalanche Energy CT

740

mJ

IAR

Avalanche Current al

See Fig. 14, 15, 22a, 22b,

A

EAR

Repetitive Avalanche Energy �

mJ