（适用于LED灯）5N60 *UTC品牌台产优势场效应管 5N60L

600V N-Channel MOSFET
Features
■ 4.5A,600v,RDS(on)=2.2Ω@VGS=10V
■ Gate charge (T*ical 17nC)
■ High ruggedness
■ Fast switching
■ 100% AvalancheTested
■ Improved dv/dt capability
General Description
This Power MOSFET is produced using Truesemi’s advanced
planar stripe, DMOS technology.This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics, such as fast switching time,low
on resistance.low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at AC
adaptors, on the battery charger and SMPS

渠道好：