*热卖 N沟道 场效应管 UT3N01Z

D*CRIPTION
The UT3N01Z uses UTC advanced technology to provide excellent
RDS(ON), low gate charge and operation with low gate voltages. This
device’s general purpose is for switching device applications.
FEATUR*
* RDS(ON) = 3.7Ω @VGS = 4 V
* Ultra low gate charge ( t*ical 1.58 nC )
* Low reverse transfer capacitance ( CRSS = t*ical 2.3 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
* Halogen-Free