* 大量现货* 供应*1N60 SOT-223

D*CRIPTION

THE UTC 1N60 is a high voltage MOSFET and is designed to have better charactertriatica ,such as fast awitching time,low gate charge.low on-atate realatanca and have a high rugged avalanvhe characteriatlca.The power MOSFET is ussally used at high apeed swiching applicationa in power suppliea,PWM motor controia.high efflclent DC to DC converters and bridge circults.

FEATUR*

* VDS = 600V                                                                      
* ID = 1.2A
* RDS(ON)=11.5?@VGS= 10V.
* Ultra Low gate charge (t*ical 5.0nC)
* Low reverse transfer capacitance (CRSS = t*ical 3.0 pF)
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* Fast switching capability 
                                                                                   

* Avalanche energy specified
* Improved dv/dt capability, high ruggedness