*50A/30V贴片MOS管 NCE3050K

D*CRIPTION
The NCE3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATUR*
● VDS =30V,ID =50A
RDS(ON) < 9mΩ @ VGS=10V
RDS(ON) < 15mΩ @ VGS=5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high *D capability

Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS 30V
Gate-Source Voltage
VGS &plu*n;20V
Drain Current-Continuous
ID 50A
Drain Current-Continuous(TC=100℃)
ID (100℃)35A
Pulsed Drain Current
IDM 140A
Maximum Power Dissipation
PD 60W
Derating factor
0.4W/℃
Single pulse avalanche energy (Note 5)
EAS
70
mJ
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 175℃