NCE3080K(N-t*e,30V80A,TO-252封装)

地区:广东 深圳
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深圳市粤嘉鸿电子有限公司

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D*CRIPTION

The   NCE3080K   uses   advanced   trench   technology   and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

GENERAL FEATUR*

●  V=30V,I =80A 

    RDS(ON) < 7.5m? @ VGS=10V                                                    

    RDS(ON) < 10m? @ VGS=5V

●  High density cell design for ultra low Rdson

●  Fully characterized Avalanche voltage and current

●  Good stability and uniformity with high EAS

●  Excellent package for good heat dissipation

Application

●  Power switching application

●  Hard Switched and High Frequency Circuits                                    

●  Uninterruptible Power Supply

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品牌/商标

NCE(新洁能)

型号/规格

NCE3080K

种类

*缘栅(MOSFET)

沟道类型

N沟道

导电方式

增强型

用途

SW-REG/开关电源

封装外形

SMD(SO)/表面封装

材料

N-FET硅N沟道