*现货供10毫欧级*30V/10A贴片MOS管*童 FDS6690

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FDS6690 Single N-Channel Logic Level PWM Optimized PowerTrench® MOSFET
Features
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter FDS6690 Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage &plu*n;20 V
ID Drain Current - Continuous (Note 1a) 10 A - Pulsed 50
PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2
(Note 1c) 1
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARA*ERISTICS
RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RqJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W

FDS6690 Rev.C
10 A, 30 V. RDS(ON) = 0.0135 W @ VGS = 10 V
RDS(ON) = 0.0200 W @ VGS = 4.5 V.
Optimized for use in switching DC/DC converters with
PWM controllers.
Very fast switching .
Low gate charge (Qg t* = 13 nC).