MT25QL01GBBB8ESF-0SIT TR 原装全新

MT25QL01GBBB8ESF-0SIT TR 原装全新

Micron Serial NOR Flash Memory3V, Multiple I/O, 4KB, 32KB, 64KB Sector EraseMT25QL01GBBB

Stacked device (two 512Mb die)

SPI-compatible serial bus interface

Single and double transfer rate (STR/DTR)

Clock frequency

– 133 MHz (MAX) for all protocols in STR

– 90 MHz (MAX) for all protocols in DTR

Dual/quad I/O commands for increased throughput up to 90 MB/s

Supported protocols: Extended, Dual and Quad I/Oboth STR and DTR

Execute-in-place (XIP)

PROGRAM/ERASE SUSPEND operations

Volatile and nonvolatile configuration settings

Software reset

Additional reset pin for selected part numbers

3-byte and 4-byte address modes

– enable memoryaccess beyond 128Mb

Dedicated 64-byte OTP area outside main memory

– Readable and user-lockable

Erase capability

– Die Erase

– Sector erase 64KB uniform granularity

– Subsector erase 4KB, 32KB granularity

Erase performance: 400KB/sec (64KB sector)

Erase performance: 80KB/sec (4KB sub-sector)

Program performance: 2MB/sec

Security and write protection

– Volatile and nonvolatile locking and softwarewrite protection for each 64KB sector

– Nonvolatile configuration locking

– Password protection

– Hardware write protection: nonvolatile bits(BP[3:0] and TB) define protected area size

– Program/erase protection during power-up

– CRC detects accidental changes to raw data 

Electronic signature

– JEDEC-standard 3-byte signature (BA21h)

– Extended device ID: two additional bytes identifydevice factory options 

JESD47H-compliant

– Minimum 100,000 ERASE cycles per sector

– Data retention: 20 years (TYP)