供应DS35M1GA-IBR 原装 NAND FLASH

DS35M1GA-IBR 原装 NAND FLASH 的技术参数

DS35M1GA-IBR 原装 NAND FLASH  的描述

DS35X1GAXXX is a 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 3.3/1.8 Vcc Power Supply, and with SPI interface.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells.

Program operation allows the 2112-byte page writing in typical 300us and an erase operation can be performed in typical 2 ms on a 128K-byte block. Data in the page can be read out at 10ns cycle time per word. The on-chip Program/Erase Controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.

DS35M1GA-IBR 原装 NAND FLASH

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