供应S34ML01G100BHI000 原装 NAND FLASH

S34ML01G100BHI000 原装  NAND FLASH

IC FLASH 1GBIT PARALLEL 63BGA

S34ML01G100BHI000 原装  NAND FLASH 的技术参数：

S34ML01G100BHI000 原装  NAND FLASH 的描述：

The Cypress S34ML01G1, S34ML02G1, and S34ML04G1 series is offered with a 3.3-V VCC power supply, and with ×8 or ×16 I/O interface. Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The page size for ×8 is (2048 + 64 spare) bytes; for ×16 (1024 + 32) words. Each block can be programmed and erased up to 100,000 cycles with ECC (error correction code) on.

 To extend the lifetime of NAND flash devices, the implementation of an ECC is mandatory. The chip supports CE# don't care function. This function allows the direct download of the code from the NAND flash memory device by a microcontroller, since the CE# transitions do not stop the read operation.

The devices have a Read Cache feature that improves the read throughput for large files.

During cache reading, the devices load the data in a cache register while the previous data is transferred to the I/O buffers to be read

只做原装，价格优势，原盒原标 ，有需要的联系

KLMBG2JETD-B041 SAMSUNG/三星

KLMAG1JETD-B041 SAMSUNG/三星

KLM8G1GETF-B041 SAMSUNG/三星

KLM4G1FETE-B041 SAMSUNG/三星

K4E8E324EB-EGCF SAMSUNG/三星

K4E6E304EB-EGCF SAMSUNG/三星

K4E6E304EC-EGCG SAMSUNG/三星

K4B4G1646E-BCNB SAMSUNG/三星

K4A8G165WB-BCRC SAMSUNG/三星

K4U6E3S4AA-MGCR SAMSUNG/三星

K4UBE3D4AA-MGCL SAMSUNG/三星

K4UBE3D4AB-MGCL SAMSUNG/三星

H5AN8G6NCJR-VKC SK HYNIX/海力士

H5AN4G6NBJR-VKC SK HYNIX/海力士

H5AN4G6NBJR-UHC SK HYNIX/海力士

H26M41208HPR SK HYNIX/海力士

H26M41204HPR SK HYNIX/海力士

MTFC8GAKAJCN-4MIT MICRON/镁光

MTFC4GACAJCN-4MIT MICRON/镁光

MTFC4GACAJCN-1MWT MICRON/镁光

MT53E256M32D2DS-053WTB MICRON/镁光

MT53D512M64D4HR-053WTD MICRON/镁光