供应S34ML02G100TFI000 原装 NAND FLASH

地区:广东 深圳
认证:

深圳市迅丰达电子科技有限公司

金牌会员3年

全部产品 进入商铺

S34ML02G100TFI000 原装 NAND FLASH 的技术参数:

产品种类

NAND闪存

RoHS

安装风格

SMD/SMT

封装 / 箱体

TSOP-48

系列

S34ML02G1

存储容量

2 Gbit

接口类型

Parallel

定时类型

Asynchronous

数据总线宽度

8 bit

电源电压

2.7 V to 3.6 V

工作温度

- 40 C to + 85 C

存储类型

NAND

写周期时间 - 字,页

25 ns

结构

Multiplane

湿度敏感性

Yes

 

S34ML02G100TFI000 原装 NAND FLASH 的描述:

The Cypress S34ML01G1, S34ML02G1, and S34ML04G1 series is offered with a 3.3-V VCC power supply, and with ×8 or ×16 I/O interface.

 

Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.

 

 The page size for ×8 is (2048 + 64 spare) bytes; for ×16 (1024 + 32) words. Each block can be programmed and erased up to 100,000 cycles with ECC (error correction code) on. To extend the lifetime of NAND flash devices, the implementation of an ECC is mandatory.

 

 The chip supports CE# don't care function. This function allows the direct download of the code from the NAND flash memory device by a microcontroller, since the CE# transitions do not stop the read operation.

 

只做原装,价格优势,原盒原标 ,有需要的联系

KLMBG2JETD-B041 SAMSUNG/三星

KLMAG1JETD-B041 SAMSUNG/三星

KLM8G1GETF-B041 SAMSUNG/三星

KLM4G1FETE-B041 SAMSUNG/三星

K4E8E324EB-EGCF SAMSUNG/三星

K4E6E304EB-EGCF SAMSUNG/三星

K4E6E304EC-EGCG SAMSUNG/三星

K4B4G1646E-BCNB SAMSUNG/三星

K4A8G165WB-BCRC SAMSUNG/三星

K4U6E3S4AA-MGCR SAMSUNG/三星

K4UBE3D4AA-MGCL SAMSUNG/三星

K4UBE3D4AB-MGCL SAMSUNG/三星

H5AN8G6NCJR-VKC SK HYNIX/海力士

H5AN4G6NBJR-VKC SK HYNIX/海力士

H5AN4G6NBJR-UHC SK HYNIX/海力士

H26M41208HPR SK HYNIX/海力士

H26M41204HPR SK HYNIX/海力士

MTFC8GAKAJCN-4MIT MICRON/镁光

MTFC4GACAJCN-4MIT MICRON/镁光

MTFC4GACAJCN-1MWT MICRON/镁光

MT53E256M32D2DS-053WTB MICRON/镁光

MT53D512M64D4HR-053WTD MICRON/镁光

型号

S34ML02G100TFI000

制造商

SPANSION

封装

FBGA

批次

23+

无铅/环保

无铅/环保