MT29F4G08ABADAWP:D 原装 NAND FLASH

Micron NAND Flash devices include an asynchronous data interface for high-perform-ance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfercommands, address, and data. There are five control signals used to implement the asyn-chronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals controlhardware write protection and monitor device status (R/B#)

This hardware interface creates a low pin-count device with a standard pinout that re-mains the same from one density to another, enabling future upgrades to higher densi-ties with no board redesign.

MT29F4G08ABADAWP:D 原装 NAND FLASH 的技术参数：

制造商	MICRON
存储器类型	非易失
存储器格式	闪存
技术	闪存-NAND
存储容量	4Gb（512M x 8）
存储器接口	并联
访问时间	95ns
写周期时间 - 字，页	60 ns
电压 - 供电	2.7V ~ 3.6V
工作温度	0C ~ 70°C（TA）
安装类型	表面贴装型
封装/箱体	48-TSOP

MTFC8GAKAJCN-4MIT	MICRON/镁光
MTFC4GACAJCN-4MIT	MICRON/镁光
MTFC4GACAJCN-1MWT	MICRON/镁光
MT53E256M32D2DS-053WT:B	MICRON/镁光
MT53D512M64D4HR-053WT:D	MICRON/镁光
MT53D512M32D2DS-053WT:D	MICRON/镁光
MT52L512M32D2PF-107WT:B	MICRON/镁光
MT52L256M32D1PF-107WT:B	MICRON/镁光
MT41K64M16TW-107:J	MICRON/镁光
MT41K64M16TW-107IT:J	MICRON/镁光
MT41K512M8DA-107:P	MICRON/镁光
MT41K256M16TW-107:P	MICRON/镁光
MT41K256M16TW-107IT:P	MICRON/镁光
MT41K256M16TW-107AIT:P	MICRON/镁光
MT41K128M16JT-125:K	MICRON/镁光
MT41K128M16JT-125IT:K	MICRON/镁光
MT40A512M16LY-075:E	MICRON/镁光
MT29F64G08CBABBWPR:B	MICRON/镁光
MT29F4G08ABAEAWP:E	MICRON/镁光
MT29F2G08ABAGAWP-IT:G	MICRON/镁光
MT29F2G08ABAEAWP-IT:E	MICRON/镁光
MT29F2G08ABAEAWP:E	MICRON/镁光
MT29F2G08ABAEAH4:E	MICRON/镁光
MT29F2G01ABAGDWB-IT:G	MICRON/镁光
MT53D512M64D4HR-053 WT:D	MICRON/镁光

型号

MT29F4G08ABADAWP:D

制造商

MICRON/镁光

封装

TSOP

批次

21+/22+

无铅/环保