MT53E256M32D2DS-053 WT:B 全新原装

MT53E256M32D2DS-053 WT:B 全新原装  的描述：

The 4Gb Mobile Low-Power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speedCMOS, dynamic random-access memory. The device is internally configured with x16I/O, 8-banks.Each of the x16’s 536,870,912-bit banks is organized as 32,768 rows by 1024 columns by16 bits.

MT53E256M32D2DS-053 WT:B 全新原装  的特征：

 Ultra-low-voltage core and I/O power supplies

– VDD1 = 1.70–1.95V; 1.80V nominal

– VDD2 = 1.06–1.17V; 1.10V nominal

– VDDQ = 1.06–1.17V; 1.10V nominal or Low VDDQ = 0.57–0.65V; 0.60V nominal

Frequency range

– 2133–10 MHz (data rate range: 4266–20 Mb/s/pin)

16n prefetch DDR architecture

8 internal banks per channel for concurrent operation

Single-data-rate CMD/ADR entry

Bidirectional/differential data strobe per byte lane

Programmable READ and WRITE latencies (RL/WL)

Programmable and on-the-fly burst lengths (BL = 16, 32)

Directed per-bank refresh for concurrent bank operation and ease of command scheduling

Up to 8.5 GB/s per die

On-chip temperature sensor to control self refresh rate

Partial-array self refresh (PASR)

Selectable output drive strength (DS)

Clock-stop capability

RoHS-compliant, “green” packaging

Programmable VSS (ODT) termination

MT53E256M32D2DS-053 WT:B 全新原装 的描述：

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