供应H5AN8G6NAFR-UHC 原装 DDR4

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H5AN8G6NAFR-UHC  原装  DDR4

8Gb DDR4 SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

 

脚位/封装

FBGA

外包装

TRAY

无铅/环保

无铅/环保

电压()

1.2V

温度规格

0°C~+95°C

速度

1200 MHZ

标准包装数量

1600

Number Of Words

512M

Bit Organization

x16

Density

8G

Operating Temperature

commercial temperature(0°C ~ 85°C) & normal power

Package Material

lead & halogen free(ROHS compliant)

Hynix Memory

H

Die Generation

2nd

No Of Banks

Non-TSV

Product Family

DRAM

Shipping Method

tray

 

 

The H5AN8G4NAFR-xxC, H5AN8G8NAFR-xxC and H5AN8G6NAFR-xxC are a 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 8Gb DDR4 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

型号

H5AN8G6NAFR-UHC

制造商

SK Hynix /海力士

封装

FBGA

批次

21+/22+

无铅/环保

无铅/环保