MT40A2G8VA-062E:B 原装 DDR4

MT40A2G8VA-062E:B原装 DDR4

VDD = VDDQ = 1.2V ±60mV

VPP = 2.5V, –125mV, +250mV

On-die, internal, adjustable VREFDQ generation

1.2V pseudo open-drain I/O

TC maximum up to 95°C – 64ms, 8192-cycle refresh up to 85°C – 32ms, 8192-cycle refresh at >85°C to 95°C

-16 internal banks (x4, x8): 4 groups of 4 banks each

-8 internal banks (x16): 2 groups of 4 banks each

8n-bit prefetch architecture

Programmable data strobe preambles

Data strobe preamble training

Command/Address latency (CAL)

Multipurpose register READ and WRITE capability

Write leveling

Self refresh mode

Low-power auto self refresh (LPASR)

Temperature controlled refresh (TCR)

Fine granularity refresh

Self refresh abort

Maximum power saving

Output driver calibration

Nominal, park, and dynamic on-die termination (ODT)

Data bus inversion (DBI) for data bus

Command/Address (CA) parity

Databus write cyclic redundancy check (CRC)

Per-DRAM addressability

Connectivity test

JEDEC JESD-79-4 compliant

sPPR and hPPR capability

全新原包原装可含税（香港可交）

MT29F4G08ABAEAWP:E MICRON/镁光  10K

MT29F2G08ABAGAWP-IT:G MICRON/镁光  10K

MT29F2G08ABAEAWP-IT:E MICRON/镁光  10K

MT29F2G08ABAEAWP:E MICRON/镁光  10K

MT29F2G08ABAEAH4:E MICRON/镁光  10K

MT29F2G01ABAGDWB-IT:G MICRON/镁光  10K

MT53D512M64D4HR-053 WT:D MICRON/镁光  10K

K4UBE3D4AA-MGCL SAMSUNG/三星  10K

K4UBE3D4AB-MGCL SAMSUNG/三星  10K

K4U6E3S4AA-MGCR SAMSUNG/三星  10K