供应NT5TU32M16FG-AC原装DDR2
地区：广东 深圳
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NT5TU32M16FG-AC原装DDR2
Commercial and Industrial DDR2 512Mb SDRAM
NT5TU32M16FG-AC原装DDR2 的技术参数：
|
制造商 |
NANYA Technology KGD |
|
存储器构架(格式) |
SDRAM DDR2 |
|
架构 |
32M x 16 |
|
存储容量 |
512Mbit |
|
工作电压 |
1.7V~1.9V |
|
工作电流 |
47mA |
|
刷新电流 |
11mA |
|
工作温度 |
-40℃~+95℃ |
|
封装/箱体 |
FBGA-84 |
|
电压 |
1.8V |
The 512Mb DDR2 SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. Read and write accesses to the DDR2 SDRAM are burst oriented; accesses start at a selected location and continue for the burst length of four or eight in a programmed sequence. Accesses begin with the registration of an Activate command, which is followed by a Read or Write command
热卖库存，原装原包原盒可含税（香港可交），全新
|
MT29F2G08ABAEAWPE |
MICRON/镁光 |
|
|
MT29F2G08ABAEAH4E |
MICRON/镁光 |
|
|
MT29F2G01ABAGDWB-ITG |
MICRON/镁光 |
|
|
MT53D512M64D4HR-053 WTD |
MICRON/镁光 |
|
|
K4UBE3D4AA-MGCL |
SAMSUNG/三星 |
|
|
K4UBE3D4AB-MGCL |
SAMSUNG/三星 |
|
|
K4U6E3S4AA-MGCR |
SAMSUNG/三星 |
|
|
MT29F64G08CBABBWPRB |
MICRON/美光 |
|
|
KLMBG2JETD-B041 |
SAMSUNG/三星 |
|
|
KLMAG1JETD-B041 |
SAMSUNG/三星 |
|
|
KLM8G1GETF-B041 |
SAMSUNG/三星 |
|
|
KLM4G1FETE-B041 |
SAMSUNG/三星 |
|
|
K4E8E324EB-EGCF |
SAMSUNG/三星 |
|
|
K4E6E304EB-EGCF |
SAMSUNG/三星 |
|
|
K4E6E304EC-EGCG |
SAMSUNG/三星 |
|
|
K4B4G1646E-BCNB |
SAMSUNG/三星 |
|
|
K4A8G165WB-BCRC |
SAMSUNG/三星 |
|
|
TC58NVG0S3ETAI0 |
KIOXIA/铠侠 |
|
|
TC58BVG1S3HTA00 |
KIOXIA/铠侠 |
|
|
TC58BVG0S3HTA00 |
KIOXIA/铠侠 |
|
|
NT5CC64M16GP-DII |
NANYA/南亚 |
|
|
NT5CC64M16GP-DI |
NANYA/南亚 |
|
|
NT5CC256M16ER-EKI |
NANYA/南亚 |
|
|
NT5CC256M16ER-EK |
NANYA/南亚 |
|
|
NT5CC256M16EP-EK |
NANYA/南亚 |
|
|
NT5CC128M16JR-EK |
NANYA/南亚 |
|
|
K4A8G165WC-BCRC |
SAMSUNG/三星 |
|
|
K4A8G165WB-BCRC |
SAMSUNG/三星 |
|
|
K4A4G165WF-BCTD |
SAMSUNG/三星 |
|
|
K4A4G165WE-BCRC |
SAMSUNG/三星 |
|
|
H9HCNNNCPUMLHR-NME |
SK HYNIX/海力士 |
|
|
H9HCNNNCPMMLXR-NEE |
SK HYNIX/海力士 |
|
|
H9HCNNNCPMALHR-NEE |
SK HYNIX/海力士 |
|
|
H9HCNNNBPUMLHR-NMO |
SK HYNIX/海力士 |
|
NT5TU32M16FG-AC
NANYA/南亚
FBGA
22+
无铅/环保
是
