MT61K512M32KPA-14:C 原装 GDDR6

FBGA Code：D9ZPM

2 Channels x 512 Meg x 16 I/O, 2 Channels x 1 Gig x 8 I/O

The GDDR6 SGRAM is a high-speed dynamic random-access memory designed for applications requiring high bandwidth. It is internally configured as 16‐bank memory and contains 17,179,869,184 bits. The GDDR6 SGRAM’s high-speed interface is optimized for point-to-point connections to a host controller.

On-die termination (ODT) is provided for all high-speed interface signals to eliminate the need for termination resistors in the system.

GDDR6 uses a 16n-prefetch architecture and a DDR or QDR interface to achieve highspeed operation. The device’s architecture consists of two 16-bit-wide fully independent channels.

MT61K512M32KPA-14:C 原装 GDDR6 的技术参数：

制造商	Micron Technology
产品种类	六代同步图形随机存储器
类型	SGRAM - GDDR6
安装风格	SMD/SMT
封装/箱体	FBGA-180 DDP(12*14)
数据总线宽度	32 bit
组织	512 M x 32
存储容量	16 Gbit
(MAX)时钟频率	1.5 GHz
电源电压	1.3095 V TO 1.3905 V
工作温度	0 C TO + 95 C
封装:	Tray
商标	Micron
湿度敏感性	Yes
产品类型	DRAM
工厂包装数量	1260

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MT41K64M16TW-107IT:J	MICRON/镁光
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MT41K256M16TW-107:P	MICRON/镁光
MT41K256M16TW-107IT:P	MICRON/镁光
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MT41K128M16JT-125IT:K	MICRON/镁光
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MT29F64G08CBABBWPR:B	MICRON/镁光
MT29F4G08ABAEAWP:E	MICRON/镁光
MT29F2G08ABAGAWP-IT:G	MICRON/镁光
MT29F2G08ABAEAWP-IT:E	MICRON/镁光
MT29F2G08ABAEAWP:E	MICRON/镁光
MT29F2G08ABAEAH4:E	MICRON/镁光
MT29F2G01ABAGDWB-IT:G	MICRON/镁光
MT53D512M64D4HR-053 WT:D	MICRON/镁光
K4UBE3D4AA-MGCL	SAMSUNG/三星
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K4U6E3S4AA-MGCR	SAMSUNG/三星

型号

MT61K512M32KPA-14:C

制造商

MICRON/镁光

封装

FBGA

批次

21+/22+

无铅/环保