H5TQ4G63CFR-TEC 原装全新 DDR3

H5TQ4G63CFR-TEC 原装全新 DDR3

? VDD=VDDQ=1.5V +/- 0.075V

? Fully differential clock inputs (CK, CK) operation

? Differential Data Strobe (DQS, DQS)

? On chip DLL align DQ, DQS and DQS transition with CK  transition

? DM masks write data-in at the both rising and falling edges of the data strobe

? All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock

? Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 13 and 14 supported

? Programmable additive latency 0, CL-1, and CL-2 supported

? Programmable CAS Write latency (CWL) = 5, 6, 7, 8 9 and 10

? Programmable burst length 4/8 with both nibble sequential and interleave mode

? BL switch on the fly

? 8banks

? Average Refresh Cycle (Tcase of 0 oC~ 95 oC)

- 7.8 μs at 0oC ~ 85 oC

- 3.9 μs at 85oC ~ 95 oC

Commercial Temperature( 0oC ~ 95 oC)

Industrial Temperature( -40oC ~ 95 oC)

? JEDEC standard 78ball FBGA(x8), 96ball FBGA (x16)

? Driver strength selected by EMRS

? Dynamic On Die Termination supported

? Asynchronous RESET pin supported

? ZQ calibration supported

? TDQS (Termination Data Strobe) supported (x8 only)

? Write Levelization supported

? 8 bit pre-fetch

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MT29F64G08CBABAWP固带 10K 23+

KLM8G1GETF-B041 10K 23+

KLMBG2JETD-B041 10K 23+

KLMAG1JETD-B041 10K 23+

K4E6E304EC-EGCG 10K 23+

K4B4G1646E-BCNB 10K 23+

K4F6E3S4HM-MGCJ 10K 23+

K4AAG165WA-BCWE 10K 23+

K4B4G0846E-BCNB 10K 23+

K4UBE3D4AA-MGCL 10K 23+

K4UBE3D4AB-MGCL 10K 23+

K4U6E3S4AA-MGCR 10K 23+

全新原包原装可含税（香港可交）